IndiumV3, Chine, Analysis, bibRecord, 001D60

Interband impact ionization in THz-driven InAs/AlSb heterostructures

Identifieur interne : 001D60 ( Chine/Analysis ); précédent : 001D59; suivant : 001D61

Interband impact ionization in THz-driven InAs/AlSb heterostructures

Auteurs : RBID : Pascal:02-0219850

Descripteurs français

Pascal (Inist)
- Ionisation choc, Valence, Mobilité porteur charge, Température électronique, Génération porteur charge, Phénomène transport, Paire électron trou, Indium arséniure, Semiconducteur, Aluminium antimoniure, Hétérostructure, Composé binaire, InAs, Al Sb, AlSb, 7361E, 7350G, As In.
Wicri :
- geographic : Valence (Drôme).

English descriptors

KwdEn :
- Aluminium antimonides, Binary compounds, Carrier mobility, Charge carrier generation, Electron hole pair, Electron temperature, Heterostructures, Impact ionization, Indium arsenides, Semiconductor materials, Transport processes, Valence.

Abstract

Extended balance equations accounting for the conduction-valence interband impact ionization (II) process in semiconductor heterostructures are presented. The II effect and terahertz (THz) field influence on electron transport in InAs/AlSb heterostructures is studied. It is shown that the II process usually results in a decrease in electron velocity and temperature when compared to the case without the II process. Qualitative agreement is obtained between the calculated electron-hole generation rates and available experimental data. Comparison with published experimental data on THz-driven heterostructures is also made.

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Pascal:02-0219850

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Interband impact ionization in THz-driven InAs/AlSb heterostructures</title>
<author><name sortKey="Cao, J C" uniqKey="Cao J">J. C. Cao</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Lei, X L" uniqKey="Lei X">X. L. Lei</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Applied Physics, Shanghai Jiaotong University, 1954 Huashan Road</s1>
<s2>Shanghai 200030</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200030</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Li, A Z" uniqKey="Li A">A. Z. Li</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
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<author><name sortKey="Qi, M" uniqKey="Qi M">M. Qi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
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</author>
<author><name sortKey="Liu, H C" uniqKey="Liu H">H. C. Liu</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Metallurgy, Chinese Academy of Sciences, Institute for Microstructural Sciences, National Research Council</s1>
<s2>Ottawa, ON, K1A 0R6</s2>
<s3>CAN</s3>
<sZ>5 aut.</sZ>
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<country>Canada</country>
<wicri:noRegion>Ottawa, ON, K1A 0R6</wicri:noRegion>
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<seriesStmt><idno type="ISSN">0268-1242</idno>
<title level="j" type="abbreviated">Semicond. sci. technol.</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium antimonides</term>
<term>Binary compounds</term>
<term>Carrier mobility</term>
<term>Charge carrier generation</term>
<term>Electron hole pair</term>
<term>Electron temperature</term>
<term>Heterostructures</term>
<term>Impact ionization</term>
<term>Indium arsenides</term>
<term>Semiconductor materials</term>
<term>Transport processes</term>
<term>Valence</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Ionisation choc</term>
<term>Valence</term>
<term>Mobilité porteur charge</term>
<term>Température électronique</term>
<term>Génération porteur charge</term>
<term>Phénomène transport</term>
<term>Paire électron trou</term>
<term>Indium arséniure</term>
<term>Semiconducteur</term>
<term>Aluminium antimoniure</term>
<term>Hétérostructure</term>
<term>Composé binaire</term>
<term>InAs</term>
<term>Al Sb</term>
<term>AlSb</term>
<term>7361E</term>
<term>7350G</term>
<term>As In</term>
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<keywords scheme="Wicri" type="geographic" xml:lang="fr"><term>Valence (Drôme)</term>
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<front><div type="abstract" xml:lang="en">Extended balance equations accounting for the conduction-valence interband impact ionization (II) process in semiconductor heterostructures are presented. The II effect and terahertz (THz) field influence on electron transport in InAs/AlSb heterostructures is studied. It is shown that the II process usually results in a decrease in electron velocity and temperature when compared to the case without the II process. Qualitative agreement is obtained between the calculated electron-hole generation rates and available experimental data. Comparison with published experimental data on THz-driven heterostructures is also made.</div>
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<fA14 i1="03"><s1>Institute of Metallurgy, Chinese Academy of Sciences, Institute for Microstructural Sciences, National Research Council</s1>
<s2>Ottawa, ON, K1A 0R6</s2>
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<fC01 i1="01" l="ENG"><s0>Extended balance equations accounting for the conduction-valence interband impact ionization (II) process in semiconductor heterostructures are presented. The II effect and terahertz (THz) field influence on electron transport in InAs/AlSb heterostructures is studied. It is shown that the II process usually results in a decrease in electron velocity and temperature when compared to the case without the II process. Qualitative agreement is obtained between the calculated electron-hole generation rates and available experimental data. Comparison with published experimental data on THz-driven heterostructures is also made.</s0>
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   |wiki=   *** parameter Area/wikiCode missing *** 
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   |type=    RBID
   |clé=     Pascal:02-0219850
   |texte=   Interband impact ionization in THz-driven InAs/AlSb heterostructures
}}

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Interband impact ionization in THz-driven InAs/AlSb heterostructures

Interband impact ionization in THz-driven InAs/AlSb heterostructures

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri